A silicon germanium, high efficiency power amplifier chipset for GSM/DCS-PCS/WCDMA handset applications

2001 31st European Microwave Conference, EuMC 2001

Volumn , Issue , 2001, Pages

  Pusl, Joe ^a   Sridharan, Srikanth ^a   Helms, David ^a   Antognetti, Philip ^a   Doherty, Mark ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTIMIZATION; POWER AMPLIFIERS; THERMAL CONDUCTIVITY;

COMPETITIVE PERFORMANCE; CONSTANT ENVELOPE; HIGH EFFICIENCY POWER AMPLIFIERS; OPERATING TEMPERATURE; POWER AMPLIFIER DESIGNS; SILICON GERMANIUM; SILICON SUBSTRATES; SILICON-GERMANIUM BICMOS;

BICMOS TECHNOLOGY;

EID: 84897524487     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.2001.339190     Document Type: Conference Paper

References (6)

1. D. Wang et al, "A 2. 5GHz Low Noise High Linearity LNA/Mixer IC in SiGe BiCMOS Technology," May 2001, IEEE MTT-S symposium.
2. J Pusl et al, "SiGe Power Amplifier ICs with SWR Protection for Handset Applications," June 2001, Microwave Journal, Vol. 44, No 6, pp. 100-113.
3. A. K. Oki et al, "Future Trends of HBT Technology for Commercial and Defense Applications," 1997, IEEE MTT-S Symposium on Technologiesfor Wireless Applications Digest, pp. 123-125.
4. D. Greenberg, "SiGe BiCMOS Technology for RF/Analog/Mixed-Signal Applications," June 2000, IEEE RFIC symposium, WSA02B workshop.
5. S. Cripps, Power Amplifiers for Wireless Communications, Artech House Microwave Library, New York, 1999.
6. H. Holma et al, WCDMA for UMTS, Wiley, New York, pp. 184-185, 2001.