SCOPUS 정보 검색 플랫폼

Journal of Materials Chemistry A

Volumn 2, Issue 17, 2014, Pages 6042-6050

ScGaN and ScAlN: Emerging nitride materials

(2) Moram, M A a Zhang, S b

a IMPERIAL COLLEGE LONDON (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ENERGY EFFICIENCY; ENERGY GAP; OPTOELECTRONIC DEVICES; ZINC SULFIDE;

DEVICE APPLICATION; DIRECT BAND GAP; ENERGY EFFICIENT; FUTURE PROSPECTS; HIGHER EXCITON BINDING ENERGY; NITRIDE MATERIALS; PIEZOELECTRIC COEFFICIENT; WIDE-BAND-GAP SEMICONDUCTOR;

NITRIDES;

EID: 84897517310 PISSN: 20507488 EISSN: 20507496 Source Type: Journal
DOI: 10.1039/c3ta14189f Document Type: Article

Times cited : (115)

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