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Volumn 18, Issue , 2012, Pages 733-740
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Effects of thickness and chemical quality of SiO2 barrier on POCl3 diffusion during the formation of emitter
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Author keywords
Diffusion profile; Numerical simulation; Phosphorus diffusion; Silicon solar cells; Thermal oxidation
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Indexed keywords
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EID: 84897036006
PISSN: 18766102
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1016/j.egypro.2012.05.089 Document Type: Conference Paper |
Times cited : (3)
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References (9)
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