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Volumn 18, Issue , 2012, Pages 733-740

Effects of thickness and chemical quality of SiO2 barrier on POCl3 diffusion during the formation of emitter

Author keywords

Diffusion profile; Numerical simulation; Phosphorus diffusion; Silicon solar cells; Thermal oxidation

Indexed keywords


EID: 84897036006     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.05.089     Document Type: Conference Paper
Times cited : (3)

References (9)
  • 2
    • 84897071135 scopus 로고    scopus 로고
    • B. B. Bachi, PhD Thesis. INSA Lyon France; 2010
    • B. B. Bachi, PhD Thesis. INSA Lyon France; 2010.
  • 4
    • 84897031929 scopus 로고    scopus 로고
    • H. Ghembaza, Thesis, Tlemcen University Algeria; 2010
    • H. Ghembaza, Thesis, Tlemcen University Algeria; 2010.
  • 6
  • 7
    • 84897041842 scopus 로고    scopus 로고
    • A. Hemeryck, PhD Thesis. Toulouse III University; 2008
    • A. Hemeryck, PhD Thesis. Toulouse III University; 2008.
  • 9
    • 84897036906 scopus 로고    scopus 로고
    • A. Bentzen, PhD thesis, University of Oslo, 2006
    • A. Bentzen, PhD thesis, University of Oslo, 2006.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.