Influence of surface states on the evaluation of the flat band potential of TiO2

ACS Applied Materials and Interfaces

Volumn 6, Issue 4, 2014, Pages 2401-2406

  Ge, Hao ^a   Tian, Hui ^a   Zhou, Yangen ^c   Wu, Shuyao ^a   Liu, Daliang ^a   Fu, Xianzhi ^c   Song, Xi Ming ^a   Shi, Xicheng ^b   Wang, Xuxu ^c   Li, Ning ^d  

^a LIAONING UNIVERSITY   (China)

^b RESEARCH INSTITUTE OF CHEMICAL DEFENSE   (China)

^c FUZHOU UNIVERSITY   (China)

^d HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

equivalent circuit; Flat band potential; Mott Schottky method; semiconductor materials; semiconductor electrolyte interface; space charge capacitance

Indexed keywords

CHARGE CAPACITANCE; FLAT BAND POTENTIAL; KINETIC PROCESS; MOTT-SCHOTTKY; MOTT-SCHOTTKY PLOTS; PHYSICAL PARAMETERS; SEMICONDUCTOR ELECTROLYTE INTERFACES; TIO;

CAPACITANCE; ELECTROLYTES; EQUIVALENT CIRCUITS; SEMICONDUCTOR MATERIALS; SURFACE STATES; TITANIUM DIOXIDE;

INTERFACES (MATERIALS);

EID: 84896830508     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am404743a     Document Type: Article

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