Optically controlled excitonic transistor

Applied Physics Letters

Volumn 104, Issue 9, 2014, Pages

  Andreakou, P ^a,b   Poltavtsev, S V ^a,c   Leonard, J R ^a   Calman, E V ^a   Remeika, M ^a   Kuznetsova, Y Y ^a   Butov, L V ^a   Wilkes, J ^d   Hanson, M ^e   Gossard, A C ^e  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^d CARDIFF UNIVERSITY   (United Kingdom)

^e University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR);

ALL OPTICAL; INDIRECT EXCITONS; OPTICAL CONTROL; OPTICAL GATES; OPTICALLY CONTROLLED; PROOF OF PRINCIPLES;

EXCITONS;

EID: 84896773328     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4866855     Document Type: Article

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24. See supplementary material at http://dx.doi.org/10.1063/1.4866855 E-APPLAB-104-001409 for parameters of the structure, experimental details, and data for other source and gate beam wavelengths and electrode geometry.