Spin drift in highly doped n-type Si

Applied Physics Letters

Volumn 104, Issue 9, 2014, Pages

  Kameno, Makoto ^a   Ando, Yuichiro ^a   Shinjo, Teruya ^a   Koike, Hayato ^b   Sasaki, Tomoyuki ^b   Oikawa, Tohru ^b   Suzuki, Toshio ^c   Shiraishi, Masashi ^a,d  

^a OSAKA UNIVERSITY   (Japan)

^b TDK CORPORATION   (Japan)

^c Akita Research Institute of Advanced Technology   (Japan)

^d KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; MODULATION; SILICON;

EXTERNAL ELECTRIC FIELD; LINEARLY PROPORTIONAL; N TYPE SILICON; QUANTITATIVE ESTIMATION; SPIN PRECESSION; SPIN SIGNAL; TERMINAL METHOD; TWO TERMINALS;

TERMINALS (ELECTRIC);

EID: 84896748608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4867650     Document Type: Article

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