Effects of argon pressure and r.f. power on magnetron sputtered aluminum doped ZnO thin films

Journal of Crystal Growth

Volumn 394, Issue , 2014, Pages 116-125

  Evcimen Duygulu, N ^a   Kodolbas, A O ^b   Ekerim, A ^a  

^a YILDIZ TECHNICAL UNIVERSITY   (Turkey)

^b MATERIALS INSTITUTE   (Turkey)

Author keywords

A1. Atomic force microscopy; A1. High resolution transmission electron microscopy; A1. X ray diffraction; A3. r.f. Magnetron sputtering; B1. Al doped zinc oxide

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETRON SPUTTERING; MAGNETRONS; OPTICAL FILMS; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

AL-DOPED ZINC OXIDE; ALUMINUM DOPED ZINC OXIDES (ZNO:AL); DISTRIBUTION OF ELEMENT; ELECTRICAL , OPTICAL AND STRUCTURAL PROPERTIES; ENERGY DISPERSIVE SPECTROMETRY; MAGNETRON-SPUTTERED ALUMINUM; R.F. MAGNETRON SPUTTERING; ROOT MEAN SQUARE VALUES;

ARGON;

EID: 84896530259     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2014.02.028     Document Type: Article

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