Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2

Proceedings of the National Academy of Sciences of the United States of America

Volumn 111, Issue 11, 2014, Pages 3979-3983

  Katase, Takayoshi ^a,b   Hiramatsu, Hidenori ^a   Kamiya, Toshio ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Fe based superconductors; Field effect devices

Indexed keywords

CESIUM ION; IONIC LIQUID; IRON; POTASSIUM; RUBIDIUM ION; SELENIDE; THALLIUM;

ARTICLE; CONDUCTANCE; CRYSTAL STRUCTURE; ELECTRIC DOUBLE LAYER TRANSISTOR; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRICAL EQUIPMENT; FILM; MODULATION; NANOFABRICATION; PHASE TRANSITION; PRIORITY JOURNAL; SEMICONDUCTOR; STATIC ELECTRICITY; SURFACE PROPERTY; X RAY DIFFRACTION;

FE-BASED SUPERCONDUCTORS; FIELD-EFFECT DEVICES;

IRON COMPOUNDS; MODELS, CHEMICAL; SELENIUM; STATIC ELECTRICITY; TEMPERATURE; TRANSISTORS, ELECTRONIC;

EID: 84896515825     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1318045111     Document Type: Article

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