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EPJ Photovoltaics

Volumn 3, Issue , 2012, Pages

Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C

(6) Labrune, M a,b Bril, X a Patriarche, G c Largeau, L c Mauguin, O c Roca I Cabarrocas, P a

a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

b TOTAL (France)

c CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BEAM EPITAXY; CRYSTALLINE MATERIALS; CRYSTALLINITY; FILM PREPARATION; GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MULTILAYER FILMS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM WELLS; SILICON; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS;

CRYSTALLINE SI; CRYSTALLINE SUBSTRATES; EPITAXIALLY GROWN; LATTICE-MISMATCHED; MULTIPLE QUANTUM-WELL STRUCTURES; ORIENTED SILICON; RADIO FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; SILICON FILMS;

SUBSTRATES;

EID: 84896482123 PISSN: None EISSN: 21050716 Source Type: Journal
DOI: 10.1051/epjpv/2012010 Document Type: Article

Times cited : (11)

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