Feasibility study of homojunction CIGS solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2013, Pages 2023-2025

  Nakagawa, Naoyuki ^a   Shibasaki, Soichiro ^a   Hiraga, Hiroki ^a   Yamazaki, Mutsuki ^a   Yamamoto, Kazushige ^a   Sakurada, Shinya ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

CIGS; Homojunction; Interface state; N type doping; Solar cell

Indexed keywords

INTERFACE STATES; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CIGS; DEVICE SIMULATIONS; EXPERIMENTAL APPROACHES; FEASIBILITY STUDIES; HIGH CONVERSION EFFICIENCY; HOMOJUNCTION; N-TYPE DOPING; PARTIAL ELECTROLYTE TREATMENT;

SOLAR CELLS;

EID: 84896446138     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6744869     Document Type: Conference Paper

References (2)

1. P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz,R. Menner, W. Wischmann, and M. Powalls, "New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%," Prog. Photovolt: Res. Appl., vol. 19, pp. 894-897, 2011.
2. K. Ramanathan, F. S. Hasoon, S. Smith, D. L. Young, M. A. Contreras, P. K. Johnson, A. O. Pudov, and J. R. Sites, "Surface treatment of CuInGaSe2 thin films and its effect on the photovoltaic properties of solar cells, " J. Phys. Chem. Solids., vol. 64, pp. 1495-1498, 2003.