Silicon carbide field effect transistors for detection of ultra-low concentrations of hazardous volatile organic compounds

Materials Science Forum

Volumn 778-780, Issue , 2014, Pages 1067-1070

  Puglisi, Donatella ^a   Eriksson, Jens ^a   Bur, Christian ^a,b   Schütze, Andreas ^b   Spetz, Anita Lloyd ^a,c   Andersson, Mike ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SAARLAND UNIVERSITY   (Germany)

^c UNIVERSITY OF OULU   (Finland)

Author keywords

Gas sensors; Indoor air quality; MISFET; Silicon carbide; Volatile organic compounds

Indexed keywords

AIR QUALITY; CHEMICAL SENSORS; GAS CHROMATOGRAPHY; INDOOR AIR POLLUTION; NAPHTHALENE; SILICON CARBIDE; TEMPERATURE DISTRIBUTION; VOLATILE ORGANIC COMPOUNDS;

INDOOR AIR QUALITY; LONG TERM STABILITY; MISFET; NANO-STRUCTURED; RECOVERY TIME; SENSITIVE DETECTION; TEMPERATURE DEPENDENCE; ULTRA LOW CONCENTRATION;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84896094195     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.778-780.1067     Document Type: Conference Paper

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