Buffer layer free graphene on SiC(0 0 0 1) via interface oxidation in water vapor

Carbon

Volumn 70, Issue , 2014, Pages 258-265

  Ostler, Markus ^a,b   Fromm, Felix ^b   Koch, Roland J ^a,b   Wehrfritz, Peter ^a,b   Speck, Florian ^a   Vita, Hendrik ^c   Böttcher, Stefan ^c   Horn, Karsten ^c   Seyller, Thomas ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84895063131     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2014.01.004     Document Type: Article

References (40)

1. C. Berger, Z. Song, T. Li, X. Li, A.Y. Ogbazghi, and R. Feng et al. Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics J Phys Chem B 108 2004 19912 19916
2. C. Berger, Z. Song, X. Li, X. Wu, N. Brown, and C. Naud et al. Electronic confinement and coherence in patterned epitaxial graphene Science 312 2006 1191 1196
3. P.N. First, W.A. de Heer, T. Seyller, C. Berger, J.A. Stroscio, and J.-s. Moon Epitaxial graphenes on silicon carbide MRS Bull 35 2011 296 305
4. K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellogg, and L. Ley et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide Nat Mater 8 3 2009 203 207
5. C. Virojanadara, M. Syväjarvi, R. Yakimova, L. Johansson, A.A. Zakharov, and T. Balasubramanian Homogeneous large-area graphene layer growth on 6H-SiC(0 0 0 1) Phys Rev B 78 2008 245403
6. M. Ostler, F. Speck, M. Gick, and T. Seyller Automated preparation of high-quality epitaxial graphene on 6H-SiC(0 0 0 1) Phys Status Solidi B 247 11-12 2010 2924 2926
7. K.V. Emtsev, F. Speck, T. Seyller, and L. Ley Interaction, growth, and ordering of epitaxial graphene on SiC{0 0 0 1} surfaces: a comparative photoelectron spectroscopy study Phys Rev B 77 2008 155303
8. I. Deretzis, and A. La Magna Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0 0 0 1) Phys Rev B 84 2011 235426
9. S. Kopylov, A. Tzalenchuk, S. Kubatkin, and V.I. Fal'ko Charge transfer between epitaxial graphene and silicon carbide Appl Phys Lett 97 2010 112109
10. F. Speck, J. Jobst, F. Fromm, M. Ostler, D. Waldmann, and M. Hundhausen et al. The quasi-free-standing nature of graphene on H-saturated SiC(0 0 0 1) Appl Phys Lett 99 12 2011 122106
11. B. Premlal, M. Cranney, F. Vonau, D. Aubel, D. Casterman, and M.M. De Souza et al. Surface intercalation of gold underneath a graphene monolayer on SiC(0 0 0 1) studied by scanning tunneling microscopy and spectroscopy Appl Phys Lett 94 26 2009 263115
12. C. Virojanadara, S. Watcharinyanon, A.A. Zakharov, and L.I. Johansson Epitaxial graphene on 6H-SiC and Li intercalation Phys Rev B 82 20 2010 205402
13. C. Xia, S. Watcharinyanon, A.A. Zakharov, R. Yakimova, L. Hultman, and L.I. Johansson et al. Si intercalation/deintercalation of graphene on 6H-SiC(0 0 0 1) Phys Rev B 85 4 2012 045418
14. A.L. Walter, K.-J. Jeon, A. Bostwick, F. Speck, M. Ostler, and T. Seyller et al. Highly p-doped epitaxial graphene obtained by fluorine intercalation Appl Phys Lett 98 2011 184102
15. K.V. Emtsev, A.A. Zakharov, C. Coletti, S. Forti, and U. Starke Ambipolar doping in quasifree epitaxial graphene on SiC(0 0 0 1) controlled by Ge intercalation Phys Rev B 84 12 2011 125423
16. S. Oida, F.R. McFeely, J.B. Hannon, R.M. Tromp, M. Copel, and Z. Chen et al. Decoupling graphene from SiC(0 0 0 1) via oxidation Phys Rev B 82 4 2010 041411
17. M. Ostler, R.J. Koch, F. Speck, F. Fromm, H. Vita, and M. Hundhausen et al. Decoupling the graphene buffer layer from SiC(0 0 0 1) via interface oxidation Mater Sci Forum 717-720 2012 649 652
18. C. Mathieu, B. Lalmi, T.O. Menteş, E. Pallecchi, A. Locatelli, and S. Latil et al. Effect of oxygen adsorption on the local properties of epitaxial graphene on SiC (0 0 0 1) Phys Rev B 86 3 2012 035435
19. M.H. Oliveira, T. Schumann, F. Fromm, R. Koch, M. Ostler, and M. Ramsteiner et al. Formation of high-quality quasi-free-standing bilayer graphene on SiC(0 0 0 1) by oxygen intercalation upon annealing in air Carbon 52 2013 83 89
20. C. Riedl, C. Coletti, T. Iwasaki, A.A. Zakharov, and U. Starke Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation Phys Rev Lett 103 2009 246804
21. F. Speck, M. Ostler, J. Röhrl, J. Jobst, D. Waldmann, and M. Hundhausen et al. Quasi-freestanding graphene on SiC(0 0 0 1) Mater Sci Forum 645-648 2010 629 632
22. J.A. Robinson, M. Hollander, M. LaBella, K.A. Trumbull, R. Cavalero, and D.W. Snyder Epitaxial graphene transistors: enhancing performance via hydrogen intercalation Nano Lett 11 9 2011 3875 3880
23. S. Tanabe, M. Takamura, Y. Harada, H. Kageshima, and H. Hibino Quantum hall effect and carrier scattering in quasi-free-standing monolayer graphene Appl Phys Expr 5 12 2012 125101
24. H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons Phys Rev B 77 2008 075413
25. R.M. Feenstra, N. Srivastava, Q. Gao, M. Widom, B. Diaconescu, and T. Ohta et al. Low-energy electron reflectivity from graphene Phys Rev B 87 2013 041406
26. R.M. Feenstra, and M. Widom Low-energy electron reflectivity from graphene: first-principles computations and approximate models Ultramicroscopy 130 2013 101 108
27. N. Srivastava, Q. Gao, M. Widom, R.M. Feenstra, S. Nie, and K.F. McCarty et al. Low-energy electron reflectivity of graphene on copper and other substrates Phys Rev B 87 2013 245414
28. N. Sieber, T. Seyller, R. Graupner, L. Ley, R. Mikalo, and P. Hoffmann et al. Wetchemical preparation of silicate adlayer terminated SiC(0 0 0 1) surfaces studied by PES and LEED Mater Sci Forum 389-393 2002 717 720
29. N. Sieber, T. Seyller, R. Graupner, L. Ley, R. Mikalo, and P. Hoffmann et al. PES and LEED study of hydrogen- and oxygen-terminated 6H-SiC(0 0 0 1) and (000-1) surfaces Appl Surf Sci 184 2001 278 283
30. J.-S. Kim, J.S. Choi, M.J. Lee, B.H. Park, D. Bukhvalov, and Y.-W. Son et al. Between scylla and charybdis: hydrophobic graphene-guided water diffusion on hydrophilic substrates Sci Rep 3 2013 2309
31. L.G. Cançado, A. Jorio, E.H.M. Ferreira, F. Stavale, C.A. Achete, and R.B. Capaz et al. Quantifying defects in graphene via Raman spectroscopy at different excitation energies Nano Lett 11 2011 3190 3196
32. A. Eckmann, A. Felten, A. Mishchenko, L. Britnell, R. Krupke, and K.S. Novoselov et al. Probing the nature of defects in graphene by Raman spectroscopy Nano Lett 12 2012 3925 3930
33. J. Röhrl, M. Hundhausen, K.V. Emtsev, T. Seyller, R. Graupner, and L. Ley Raman spectra of epitaxial graphene on SiC(0 0 0 1) Appl Phys Lett 92 2008 201918
34. M. Hollering, F. Maier, N. Sieber, M. Stammler, J. Ristein, and L. Ley et al. Electronic states of an ordered oxide on C-terminated 6H-SiC Surf Sci 442 3 1999 531 542
35. M. Hollering, N. Sieber, F. Maier, J. Ristein, L. Ley, and J.D. Riley et al. Electronic and atomic structure of an ordered silicate adlayer on hexagonal SiC Mater Sci Forum 338-342 2000 387 390
36. N. Sieber, M. Hollering, J. Ristein, and L. Ley Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0 0 0 1) Mater Sci Forum 338-342 2000 391 394
37. C. Virojanadara, and L.I. Johansson Oxidation studies of 4H-SiC(0 0 0 1) and (0 0 0 1) Surf Sci 505 1-3 2002 358 366
38. E. Bauer, M. Mundschau, W. Swiech, and W. Telieps Surface studies by low-energy electron microscopy (LEEM) and conventional UV photoemission electron microscopy (PEEM) Ultramicroscopy 31 1989 49 57
39. A. Mattausch, and O. Pankratov Ab initio study of graphene on SiC Phys Rev Lett 99 2007 076802
40. S. Forti, K.V. Emtsev, C. Coletti, A.A. Zakharov, C. Riedl, and U. Starke Large-area homogeneous quasifree standing epitaxial graphene on SiC(0 0 0 1): electronic and structural characterization Phys Rev B 84 2011 125449