Erratum: High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers (Appl. Phys. Lett. (1996) 69(22) (3390–3392) (10.1063/1.117269))

Applied Physics Letters

Volumn 70, Issue 15, 1997, Pages 2056-

  li, Wei ^a   Bergman, Peder ^a   Ivanov, Ivan ^a   ni, Wei Xin ^a   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

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EID: 84894402932     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118812     Document Type: Erratum

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