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Volumn 121, Issue , 2014, Pages 31-35

An electrochemical route to MoS2 nanosheets for device applications

Author keywords

2 D material; Electrochemical exfoliation; Field effect transistor; Molybdenum disulfide

Indexed keywords


EID: 84894040528     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2014.01.052     Document Type: Article
Times cited : (48)

References (17)
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    • Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides
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  • 9
    • 84876015113 scopus 로고    scopus 로고
    • Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition
    • X Wang, H Feng, Y Wu, and L. Jiao Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition J Am Chem Soc 135 2013 5304 5307
    • (2013) J Am Chem Soc , vol.135 , pp. 5304-5307
    • Wang, X.1    Feng, H.2    Wu, Y.3    Jiao, L.4
  • 10
    • 81255169387 scopus 로고    scopus 로고
    • Single-layer semiconducting nanosheets: High-yield preparation and device fabrication
    • Z Zeng, Z Yin, X Huang, H Li, Q He, and G Lu et al. Single-layer semiconducting nanosheets: high-yield preparation and device fabrication Angew Chem Int Ed 50 2011 11093 11097
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  • 11
    • 84862881126 scopus 로고    scopus 로고
    • Preparation of high concentration dispersions of exfoliated MoS2 with increased flake size
    • A O'Neill, U Khan, and JN. Coleman Preparation of high concentration dispersions of exfoliated MoS2 with increased flake size Chem Mater 24 2012 2414 2421
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    • O'Neill, A.1    Khan, U.2    Coleman, J.N.3
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    • 2 film-based field-effect transistors for sensing NO at room temperature
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    • Li, H.1    Yin, Z.2    He, Q.3    Li, H.4    Huang, X.5    Lu, G.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.