Very high speed driver and photoreceiver modules for 40 Gbit/s optical communications

OFC/IOOC 1999 - Optical Fiber Communication Conference and the International Conference on Integrated Optics and Optical Fiber Communication

Volumn 1, Issue , 1999, Pages 106-107

  Lefevre, R ^a   Legros, E ^a   Thiam, A ^a   Andre P ^a   Vuye, S ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FIBERS; GALLIUM ARSENIDE; GALLIUM COMPOUNDS; INTEGRATED OPTICS; OPTICAL COMMUNICATION; OPTICAL FIBERS;

40-GBIT/S; HEMT TECHNOLOGIES; HIGH SPEED DRIVER; INPUT NOISE; PHOTORECEIVERS; TRANS-IMPEDANCE GAIN;

OPTICAL FIBER COMMUNICATION;

EID: 84893812757     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/OFC.1999.767808     Document Type: Conference Paper

References (5)

1. E. Legros, << distributed amplifier B French Patent no 9701544, 11th February 97.
2. P.M. Frijlink, et al. "Development of a 100 nm gate power HEMT using four-layer resist and flexible e-beam exposure strategies", Microelectronic Engineering, vol 35, Issue 1-4, pp313-316, February 1997
3. P. Andre et al. " InP DHBT Technology and Design Methodology for High Bit-rate Optical Communications Circuits" to be published in IEEE Journal of Solid-State Circuits, vol. 33, no 9, September 1998.
4. G. Wanlin, et al., "High responsivity side illuminated AlGaInAs PIN photodiode for 40 Gbit/s -40 GHz applications", ECOC' 97, 22-25 Sept. 1997, Edinburgh UK.
5. A. Miras et al, "Very high gain, high responsivity, 40 GHz narrow-band photoreceiver for clock recovqry", IEEE Electronicsletters, Vol.34, No.3, 5th Feb. 1998.