Low-contact-resistance graphene devices with nickel-etched-graphene contacts

ACS Nano

Volumn 8, Issue 1, 2014, Pages 994-1001

  Leong, Wei Sun ^a   Gong, Hao ^a   Thong, John T L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

contact resistance; etching; graphene transistor; nickel contacts; zigzag edge

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONTACT PERFORMANCE; CONTACT TREATMENT; ELECTRICAL RESISTANCES; FABRICATION PROCESS; GRAPHENE FIELD-EFFECT TRANSISTORS; GRAPHENE TRANSISTORS; ZIGZAG EDGES;

CATALYSIS; CONTACT RESISTANCE; ETCHING; FIELD EFFECT TRANSISTORS; METALLIZING; METALS; NICKEL; TRANSISTORS;

GRAPHENE;

EID: 84893482054     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn405834b     Document Type: Article

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