Finite element electro-thermal modelling of nanocrystalline phase change elements using mesh-based crystallinity approach

Electronics Letters

Volumn 50, Issue 2, 2014, Pages 100-101

  Trombetta, M ^a   Williams, N E ^a   Fischer, S ^a   Gokirmak, A ^a   Silva, H ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMSOL MULTIPHYSICS; CRYSTALLINE GRAINS; FINITE ELEMENT SIMULATIONS; MATERIAL PARAMETER; MESH-BASED MODELING; NANOCRYSTALLINE PHASE; PHASE CHANGE MEMORY CELLS; TEMPERATURE DEPENDENCIES;

GERMANIUM; THERMAL CONDUCTIVITY;

FINITE ELEMENT METHOD;

EID: 84893383998     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2013.2253     Document Type: Article

References (7)

1. Wong, H.-P., Raoux, S., Kim, S. B., Liang, J., Reifenberg, J. P., Rajendran, B., Asheghi, M., and Goodson, K. E.: 'Phase change memory', Proc. IEEE, 2010, 98, pp. 2201-2227
2. ® 4.2a', 2008
3. Faraclas, A., Bakan, G., Williams, N., Gokirmak, A., and Silva, H.: 'Thermoelectric effects in phase-change memory cells'. Material Research Society Spring Meeting, 2013, Vol. H1. 03
4. Faraclas, A., Williams, N., Gokirmak, A., and Silva, H.: 'Modeling of set and reset operations of phase-change memory cells', IEEE Electron Device Lett, 2011, 32, pp. 1737-1739-3
5. Fischer, S., Williams, N. E., Osorio, C., Ayas, S., Silva, H., and Gokirmak, A.: 'Percolation transport and filament formation in nanocrystalline silicon nanowires', J. Appl. Phys., 2013, 113, p. 164902
6. Kan'an, N., Faraclas, A., Williams, N., Silva, H., and Gokirmak, A.: 'Computational analysis of rupture-oxide phase-change memory cells', IEEE Trans. Electron Devices, 2013, 60, pp. 1649-1655
7. Bakan, G., Cywar, A., Silva, H., and Gokirmak, A.: 'Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating', Appl. Phys. Lett, 2009, 94, pp. 251910-251910-3