Tunable gaps and enhanced mobilities in strain-engineered silicane

Journal of Applied Physics

Volumn 115, Issue 3, 2014, Pages

  Restrepo, Oscar D ^a   Mishra, Rohan ^a   Goldberger, Joshua E ^b   Windl, Wolfgang ^a  

^a Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOND LENGTH; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; ENERGY GAP; GRAPHENE; MONOLAYERS; SILANES; SILICON;

BAND DISPERSIONS; COVALENTLY BOUND; DIAMOND LATTICES; ENHANCED MOBILITY; EXPERIMENTAL VALUES; FIRST-PRINCIPLES CALCULATION; HYBRID FUNCTIONALS; INDIRECT BAND GAP;

TENSILE STRAIN;

EID: 84893278167     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4860988     Document Type: Article

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