Non-intrusive characterization of active device interactions in high-efficiency power amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2013, Pages

  Hou, Rui ^a   Spirito, Marco ^a   Gajadharsing, John ^b   De Vreede, Leo C N ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Active load modulation; Near field measurement; RF power amplifiers

Indexed keywords

ACTIVE DEVICES; ACTIVE LOAD; DOHERTY POWER AMPLIFIER; HIGH-EFFICIENCY; HIGH-EFFICIENCY POWER AMPLIFIERS; INDIVIDUAL BEHAVIOR; NEAR-FIELD MEASUREMENT; RF POWER AMPLIFIERS;

EFFICIENCY; POWER AMPLIFIERS;

LOADING;

EID: 84893269704     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2013.6697599     Document Type: Conference Paper

References (5)

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