Wave-function engineering and absorption spectra in Si 0.16Ge0.84/Ge0.94Sn0.06/Si 0.16Ge0.84 strained on relaxed Si0.10Ge 0.90 type i quantum well

Journal of Applied Physics

Volumn 115, Issue 3, 2014, Pages

  Yahyaoui, N ^a   Sfina, N ^a   Lazzari, J L ^b   Bournel, A ^c   Said, M ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INFRARED DEVICES; LIGHT MODULATORS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SILICON; TIN ALLOYS; WAVE FUNCTIONS;

APPLIED BIAS VOLTAGE; DIRECT TRANSITION; HETERO-INTERFACES; NEAR-INFRARED WAVELENGTH; QUANTUM-WELL HETEROSTRUCTURE; STRAIN-COMPENSATED; STRONG ABSORPTIONS; WAVE FUNCTION ENGINEERING;

SI-GE ALLOYS;

EID: 84893253896     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4862226     Document Type: Article

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