Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes

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Volumn 10, Issue 2, 2014, Pages 247-252

  Yang, Xuyong ^a   Mutlugun, Evren ^a,b   Zhao, Yongbiao ^a   Gao, Yuan ^c   Leck, Kheng Swee ^a   Ma, Yanyan ^d   Ke, Lin ^e   Tan, Swee Tiam ^a   Demir, Hilmi V ^a   Sun, Xiao Wei ^a,f  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b BILKENT UNIVERSITY   (Turkey)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

^e INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^f SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

interfacial layer; light emitting diodes; nanoparticles; quantum dots; solution processing; tungsten oxide

Indexed keywords

BUFFER LAYER MATERIALS; HOLE INJECTION; HOLE INJECTION LAYERS; INTERFACIAL LAYER; NANOPARTICLE FILMS; SOLUTION-PROCESSED; SOLUTION-PROCESSING; TUNGSTEN OXIDE;

CHARGE INJECTION; CONDUCTING POLYMERS; LIGHT EMITTING DIODES; NANOPARTICLES; OXIDES; SEMICONDUCTOR QUANTUM DOTS; TUNGSTEN COMPOUNDS;

OPTICAL WAVEGUIDES;

EID: 84893038047     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201301199     Document Type: Article

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