Thermoelectric properties of a monolayer bismuth

Journal of Physical Chemistry C

Volumn 118, Issue 2, 2014, Pages 904-910

  Cheng, Long ^a   Liu, Huijun ^a   Tan, Xiaojian ^a   Zhang, Jie ^a   Wei, Jie ^a   Lv, Hongyan ^a   Shi, Jing ^a   Tang, Xinfeng ^b  

^a WUHAN UNIVERSITY   (China)

^b Wuhan University of Technology   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC TRANSPORT PROPERTIES; EQUILIBRIUM MOLECULAR DYNAMICS; LATTICE THERMAL CONDUCTIVITY; MODIFIED MORSE POTENTIAL; RELAXATION TIME APPROXIMATION; STRUCTURAL AND ELECTRONIC PROPERTIES; THERMOELECTRIC PROPERTIES; TOTAL ENERGY CALCULATION;

BISMUTH; CALCULATIONS; ELECTRONIC PROPERTIES; MOLECULAR DYNAMICS; THERMOELECTRICITY;

MONOLAYERS;

EID: 84892700416     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp411383j     Document Type: Article

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