230-240 GHz, 30 dB gain amplifier in INP-HEMT for multi-10 Gb/s data communication systems

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2013, Pages

  Kawano, Yoichi ^a   Matsumura, Hiroshi ^a   Shiba, Shoichi ^a   Sato, Masaru ^a   Suzuki, Toshihide ^a   Nakasha, Yasuhiro ^a   Takahashi, Tsuyoshi ^a   Makiyama, Kozo ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENVELOPE DETECTORS; GAIN AMPLIFIERS; LARGE-SIGNALS; MULTI-STAGE AMPLIFIERS; SMALL SIGNAL GAIN; SUBMILLIMETERS; TOTAL POWER CONSUMPTION; WAVE FORMS;

DETECTOR CIRCUITS; GALLIUM ARSENIDE; GALLIUM NITRIDE; INTEGRATED CIRCUITS; MODULATORS; SEMICONDUCTING GALLIUM; SILICON ALLOYS;

DATA COMMUNICATION SYSTEMS;

EID: 84892516765     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2013.6659181     Document Type: Conference Paper

References (9)

1. F. T. Ulaby, "Absorption in 220 GHz Atomospheric Window", IEEE Trans. on Antennas and Propagation, 1973.
2. W. R. Deal, "InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing", Micro. Symp. Tech. Dig. IEEE MTT-s 2012.
3. L. Samoska. et al, "On-Wafer Measurements of S-MMIC Amplifiers from 400-500 GHz" Micro. Symp. Tech. Dig. IEEE MTT-s 2011.
4. I. Kallfass. et al, "Wireless DVB-C Transmission at 220 GHz Using Active Single-Chip Receive and Transmit MMICs", Micro. Symp. Tech. Dig. IEEE MTT-s 2011.
5. V. Radisic. et al, "A 75 mW 210 GHz Power Amplifier Module", Compound Semiconductor Integrated Circuit Symposium, Tech. Dig. IEEE 2011.
6. M. Varonen. et al, "160-270-GHz InP HEMT MMIC Low-Noise Amplifiers", Compound Semiconductor Integrated Circuit Symposium, Tech. Dig. IEEE 2012.
7. A. Tessmann. et al, "Metamorphic HEMT Amplifier Circuits for Use in a High Resolution 210 GHz Radar", Compound Semiconductor Integrated Circuit Symposium, Tech. Dig. IEEE 2007.
8. T. Takahashi. et al, "Noise Figure Improvement in InP-Based HEMTs Using Wide Gate Head and Cavity Structure", IEEE Electron Device Letters, Vol. 33, No. 2, Feb 2012, pp. 206-208.
9. M. Sato. et al, "94-GHz Band High-Gain and Low-Noise Amplifier Using InP-HEMTs for Passive Millimeter Wave Imager", Micro. Symp. Tech. Dig. IEEE MTT-s, pp. 1775-1778, 2007.