Half-metal behaviour mediated by self-doping of topological line defect combining with adsorption of 3d transition-metal atomic chains in graphene

Journal of Physics D: Applied Physics

Volumn 47, Issue 5, 2014, Pages

  Zhu, Zhili ^a   Chen, Weiguang ^b   Sun, Qiang ^a   Jia, Yu ^a  

^a ZHENGZHOU UNIVERSITY   (China)

^b ZHENGZHOU NORMAL UNIVERSITY   (China)

Author keywords

first principles study; grapheme; half metal; transition metal chain

Indexed keywords

FIRST-PRINCIPLES STUDY; GRAPHEME; GRAPHENE SHEETS; HALF METALS; HALF-METALLIC CHARACTERS; SPINTRONIC DEVICE; SYSTEMATIC STUDY; TOPOLOGICAL LINES;

CHAINS; CRYSTAL ATOMIC STRUCTURE; DEFECTS; GRAPHENE; MANGANESE; TRANSITION METALS;

SCANDIUM;

EID: 84892412362     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/5/055303     Document Type: Article

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