Acoustic phonon and surface roughness spin relaxation mechanisms in strained ultra-scaled silicon films

Advanced Materials Research

Volumn 854, Issue , 2014, Pages 29-34

  Osintsev, D ^a,b   Sverdlov, V ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b VOLGOGRAD STATE TECHNICAL UNIVERSITY   (Russian Federation)

Author keywords

Phonon relaxation; Shear strain; Surface roughness relaxation; Ultra scaled SOI MOSFETS

Indexed keywords

ACOUSTIC PHONONS; MOMENTUM RELAXATION; MOMENTUM SPACES; ORDERS OF MAGNITUDE; PHONON RELAXATION; SOI-MOSFETS; SURFACE-ROUGHNESS RELAXATION; UNI-AXIAL STRAINS;

MOSFET DEVICES; NANOSTRUCTURED MATERIALS; PHONONS; SHEAR STRAIN;

SURFACE ROUGHNESS;

EID: 84891613233     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.854.29     Document Type: Conference Paper

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