Studies of gamma radiation induced effects in ge-rich chalcogenide thin films

RAD Conference Proceedings

Volumn 2012-April, Issue , 2012, Pages 19-22

  Nesheva, Diana ^a   Ailavajhala, Mahesh ^b   Chen, Ping ^b   Tenne, Dmitri A ^c   Barnaby, Hugh ^d   Mitkova, Maria ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b Boise State University   (United States)

^c BOISE STATE UNIVERSITY   (United States)

^d AZ 85281   (United States)

Author keywords

Dark and photoconductivity; Ge Se thin films; Structural changes; irradiation

Indexed keywords

DOSIMETRY; GAMMA RAYS; GERMANIUM COMPOUNDS; IRRADIATION; PHOTOCONDUCTIVITY; RADIATION EFFECTS; SELENIUM COMPOUNDS;

CHALCOGENIDE THIN FILMS; DARK CONDUCTIVITY; RADIATION SENSORS; RADIATION-INDUCED; RADIATION-INDUCED EFFECTS; RELATIVE INTENSITY; STRUCTURAL CHANGES; STRUCTURAL ORDERING;

THIN FILMS;

EID: 84891555953     PISSN: None     EISSN: 24664626     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

1. S. Sugai, "Stochastic random network model in Ge and Si chalcogenide glasses", Phys. Rev. B, vol. 35, pp. 1345-1361, January 1987.
2. P. M. Bridenbaugh, G. P. Espinosa, J. E. Griffiths, J. C. Phillips and J. P. Remeika, "Microscopic origin of the companion A1 Raman line in glassy Ge (S, Se)2", Phys. Rev. B, vol. 20, pp. 4140-4144, 1979.
3. K. Jackson, "Electric fields in electronic structure calculations: electric polarizabilities and IR and Raman spectra from first principles", Physica Status Solidi (b), vol. 217, pp. 293-310, 2000.
4. T. G. Edwards and S. Sen, "Structure and relaxation in germanium selenide glasses and supercooled liquids: a Raman spectroscopic study, The Journal of Physical Chemistry B, vol. 115, pp. 4307-4314, March 2011.
5. M. Cobb, D. A. Drabold and R. L. Cappelletti, "Ab initio molecular-dynamics study of the structural, vibrational, and electronic properties of glassy GeSe2" Phys. Rev. B, vol. 54, pp. 12162-12171, November 1996.
6. K. Jackson, A. Briley, S. Grossman, D. V. Porezag and M. R. Pederson, "The Raman active modes of a-GeSe2 and a-GeS2: a first principle theoretical study" Phys. Rev. B, vol. 60, pp. R14985-14989, December 1999.
7. X. W. Feng, W. J. Bresser and P. Boolchand, "Direct evidence for stiffness threshold in chalcogenide glasses", Phys. Rev. Lett., vol. 78, pp. 4422-4425, 1997.
8. E. Sleeckx, L. Tichý, P. Nagels and R. Callaerts, "Thermally and photo-induced irreversible changes in the optical properties of amorphous GexSe100-x films", J. Non-Cryst. Sol. 198-200, pp. 723-727, 1996.
9. O. I. Shpotyuk, "Radiation-induced effects in chalcogenide vitreous semiconductors", in Semicond. Chalcogenide Glass I: Glass formation, Structure and simulated transformations in chalcogenide glasses, R. Fairman and B. Ushkov, Eds. New York: Elsevier, Academic Press, 2004, pp. 215-244.
10. H. Kawamura and M. Matsumura, "Raman scattering and bond structure in chalcogenide glasses (Se-Ge system)", Solid State Communications, vol. 32, pp. 83-84, 1979.
11. P. Nemec, J. Jedelsky, M. Frumar, M. Stabl, Z. Cernosek and M. Vlcek, "Amorphous Ge-Se thin films prepared by pulsed-laser deposition", Phil. Mag., vol. 84, pp. 877-885, March 2004.
12. J. M. González-Leal, A. Ledesma, A. M. Bernal-Oliva, R. Prieto-Alcón, E. Márquez, J. A. Angel, and J. Cárabe, Optical properties of thin-film ternary Ge10As15Se75 chalcogenide glasses", Mater. Lett., vol. 39, pp. 232-236, May 1999.
13. G. Nelson and D. Reilly, Gamma-ray interactions with matter, in Passive nondestructive assay of nuclear materials, D. Reilly, N. Ensslin, H. Smith and S. Kreiner, Eds. Los Alamos, Los Alamos National Laboratory, 1991, pp. 27-42.
14. N. Quamhieh, G. J. Adriaenssens, "Steady-state photoconductivity in amorphous germanium selenide films", J. Non-Cryst. Solids, vol. 292, pp. 80-87, 2001.
15. S. Prakash, K. Kaur, N. Goyal, S. K. Tripathi, " Meyer-Neldel DC conduction in chalcogenide glasses", Pramana-journal of physics, vol. 76, pp. 629-637, 2011.