Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-6

  Duan, Hongfeng ^a   He, Haiping ^a   Sun, Luwei ^a   Song, Shiyan ^a   Ye, Zhizhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

In doped ZnO nanowires; Infrequent 022 3 growth orientation; Large surface to volume ratio; Low density of surface traps

Indexed keywords

ELECTRONS; II-VI SEMICONDUCTORS; INDIUM; PHOTOCATALYTIC ACTIVITY; ZINC OXIDE;

DOPED ZNO; EXCITON EMISSION; FREE ELECTRON CONCENTRATION; GROWTH ORIENTATIONS; LARGE SURFACES; PHOTO CATALYTIC DEGRADATION; POTENTIAL MATERIALS; SURFACE TRAP;

NANOWIRES;

EID: 84891400187     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-493     Document Type: Article

References (26)

1. Li JM, Dai LG, Wan XP, Zeng XL: An "edge to edge" jigsaw-puzzle twodimensional vapor-phase transport growth of high-quality large-area wurtzite-type ZnO (0001) nanohexagons. Appl Phys Lett 2012, 101:173105.
2. Luo JT, Zhu XY, Chen G, Zeng F, Pan F: Influence of the Mn concentration on the electromechanical response d(33) of Mn-doped ZnO films. Phys Stat Sol (RRL) 2010, 4:209.
3. Tian ZRR, Voigt JA, Liu J, McKenzie B, McDermott MJ, Rodriguez MA, Konishi H, Xu HF: Complex and oriented ZnO nanostructures. Nat Mater 2003, 2:821.
4. He HP, Tang HP, Ye ZZ, Zhu LP, Zhao BH, Wang L, Li XH: Temperaturedependent photoluminescence of quasialigned Al-doped ZnO nanorods. Appl Phys Lett 2007, 90:023104.
5. Yuan GD, Zhang WJ, Jie JS, Fan X, Tang JX, Shafiq I, Ye ZZ, Lee CS, Lee ST: Tunable n-type conductivity and transport properties of Ga-doped ZnO nanowire arrays. Adv Mater 2008, 20:168.
6. Huang YH, Zhang Y, Gu YS, Bai XD, Qi JJ, Liao QL, Liu J: Field emission of a single in-doped ZnO nanowire. J Phys Chem C 2007, 111:9039.
7. Wang RP, Sleight AW, Platzer R, Gardner JA: Nonstoichiometric zinc oxide and indium-doped zinc oxide: electrical conductivity and in-111-TDPAC studies. J Sol Stat Chem 1996, 122:166.
8. Ding Y, Kong XY, Wang ZL: Doping and planar defects in the formation of single-crystal ZnO nanorings. Phys Rev B 2004, 70:235408.
9. Wu LL, Liu FW, Zhang XT: Group III element-doped ZnO twinning nanostructures. Cryst Eng Comm 2011, 13:4251.
10. 3 superlattice nanobelts. Cryst Eng Comm 2011, 13:3569.
11. Thompson RS, Li DD, Witte CM, Lu JG: Weak localization and electron-electron interactions in indium-doped ZnO nanowires. Nano Lett 2009, 9:3991.
12. Lin SS, Ye ZZ, He HP, Zeng YJ, Tang HP, Zhao BH, Zhu LP: Catalyst-free synthesis of vertically aligned screw-shape InZnO nanorods array. J Cryst Growth 2007, 306:339.
13. Wang ZL, Kong XY, Ding Y, Gao PX, Hughes WL, Yang RS, Zhang Y: Semiconducting and piezoelectric oxide nanostructures induced by polar surfaces. Adv Funct Mater 2004, 14:943.
14. Bae SY, Choi HC, Na CW, Park J: Influence of In incorporation on the electronic structure of ZnO nanowires. Appl Phys Lett 2005, 86:033102.
15. 0.01O texture: growth mechanism and codoping effect. J Appl Phys 2013, 113:083513.
16. Wischmeier L, Voss T, Rueckmann I, Gutowski J, Mofor AC, Bakin A, Waag A: Dynamics of surface-excitonic emission in ZnO nanowires. Phys Rev B 2006, 74:195333.
17. Grabowska J, Meaney A, Nanda KK, Mosnier JP, Henry MO, Duclere JR, McGlynn E: Surface excitonic emission and quenching effects in ZnO nanowire/nanowall systems: limiting effects on device potential. Phys Rev B 2005, 71:115439.
18. He HP, Yang Q, Liu C, Sun LW, Ye ZZ: Size-dependent surface effects on the photoluminescence in ZnO nanorod. J Phys Chem C 2011, 115:58.
19. Meyer BK, Alves H, Hofmann DM, Kriegseis W, Forster D, Bertram F, Christen J, Hoffmann A, Straßburg M, Dworzak M, Haboeck U, Rodina AV: Bound exciton and donor-acceptor pair recombinations in ZnO. Phys Stat Sol (b) 2004, 241:231.
20. 9 line in zinc ocide. Appl Phys Lett 2007, 90:012107.
21. Schirra M, Schneider R, Reiser A, Prinz GM, Feneberg M, Biskupek J, Kaiser U, Krill CE, Thonke K, Sauer R: Stacking fault related 3.31-eV luminescence at 130-meV acceptors in zinc oxide. Phys Rev B 2008, 77:125215.
22. Kurbanov SS, Panin GN, Kang TW: Spatially resolved investigations of the emission around 3.31 eV (A-line) from ZnO nanocrystals. Appl Phys Lett 2009, 95:211902.
23. Tainoff D, Masenelli B, Mélinon P, Belsky A, Ledoux G, Amans D, Dujardin C, Fedorov N, Martin P: Competition between exciton-phonon interaction and defects states in the 3.31 eV band in ZnO. Phys Rev B 2010, 81:115304.
24. Shalish I, Temkin H, Narayanamurti V: Size-dependent surface luminescence in ZnO nanowires. Phys Rev B 2004, 69:245401.
25. Tong H, Ouyang SX, Bi YP, Umezawa N, Oshikiri M, Ye JH: Nano-photocatalytic materials: possibilities and challenges. Adv Mater 2012, 24:229-251.
26. Kim DS, Richters JP, Scholz R, Voss T, Zacharias M: Modulation of carrier density in ZnO nanowires without impurity doping. Appl Phys Lett 2010, 96:123110.