Optimization of copper CVD film properties using the precursor of Cu(hfac)(tmvs) with variations of additive content

Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Volumn , Issue , 1999, Pages 170-172

  Zhang, M ^a   Kobayashi, A ^a   Koide, T ^a   Sekiguchi, A ^a   Okada, O ^a   Hosokawa, N ^a  

^a Canon ANELVA Technix Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; CHEMICAL VAPOR DEPOSITION; COPPER; METALLIC FILMS; WATER VAPOR;

ADDITIVE CONTENTS; COPPER FILMS; CVD REACTORS; DIHYDRATES; FILM PROPERTIES; HIGH RESISTIVITY; MICRO VOIDS; SMOOTH SURFACE;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84891315501     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1999.787112     Document Type: Conference Paper

References (4)

1. Arthur K. Hochberg, John A. T. Norman, and David A. Roberts. Conference proceedings ULSI X 1995 Materials Research Society, pp. 79-86.
2. N. Awaya and T. Kobayashi, Conference proceedings ULSI X III 1998 Materials Research Society, pp. 509-513.
3. A. Kobayashi, A. Sekiguchi, K. Ikeda, O. Okada, and T. Koide. The transactions of the institute of electronics, information and communication engineers C-II unpublished.
4. John A.T. Norman, David A. Roberts, Arthur K. Hochberg, Paul Smith, Gary A. Petersen, John E. Parmeter, Chris A. Apblett, and Thomas R. Omstead, Thin Solid Films 262 (1995), pp. 46-51.