Reducing the poly-si tft non-uniformity by transistor slicing

Journal of Information Display

Volumn 2, Issue 2, 2001, Pages 27-31

  Lee, Minho ^a   Lee, Inhwan ^b  

^a LG Electronics Inc   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Digital driving; Poly Si TFT LCD; TFT non uniformity; Transistor slicing

Indexed keywords

EID: 84891137086     PISSN: 15980316     EISSN: 21581606     Source Type: Journal    
DOI: 10.1080/15980316.2001.9651854     Document Type: Article

References (6)

1. Ibaraki, N., 1999. “Low Temperature Poly-Si TFT Technology,”. SID'99,:172–175.
2. Matsueda, Y., Ozawa, T., Kimura, M., Itoh, T., Kitawada, K., Nakajawa, T., and Oshima, H., 1998. “A 6-bit-Color VGA Low-Temperature Poly-Si TFT-LCD with Integrated Digital Data Drivers,”. SID'98,:879–882.
3. Morimoto, Y., Jinno, Y., Hirai, K., Ogata, H., Yamada, T., and Yoneda, K., 1997. “Influence of Grain Boundaries and Intragrain Defects on the Performance of Poly-Si Thin Film Transistors,”. Journal of Electrochemical Society, 144 (7) July
4. Yoneda, K., 1997. “Current Status of Production Technologies in Low-Temperature Poly-Silicon TFTs,”. IDW'97,:231–234.
5. Jeon, J., Kwon, O. K., and Lee, I., 1998. “A New Digital Driving Scheme for Poly-Si TFT-LCD Panels,”. Asia Display'98,:425–428.
6. Hogg, R. V., and Craig, A. T., 1978. Introduction to Mathematical Statistics, 4th Edition, Macmillan.