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Volumn 88, Issue 20, 2013, Pages

Heterostructures of bilayer graphene and h-BN: Interplay between misalignment, interlayer asymmetry, and trigonal warping

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Indexed keywords


EID: 84890471310     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.88.205418     Document Type: Article
Times cited : (64)

References (18)
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    • We tested all of our above conclusions for a "single-side gate" geometry, where a large charge density required to fill the first miniband (four electrons per moiré supercell) is induced by a single gate, which induces additional interlayer asymmetry (Refs. and), and found that its presence has almost no effect on the type of the miniband spectrum at the edge of the first miniband (gapped or overlapping minibands).
    • We tested all of our above conclusions for a "single-side gate" geometry, where a large charge density required to fill the first miniband (four electrons per moiré supercell) is induced by a single gate, which induces additional interlayer asymmetry (Refs. and), and found that its presence has almost no effect on the type of the miniband spectrum at the edge of the first miniband (gapped or overlapping minibands).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.