Joint rewriting and error correction in write-once memories

IEEE International Symposium on Information Theory - Proceedings

Volumn , Issue , 2013, Pages 1067-1071

  Jiang, Anxiao Andrew ^a   Li, Yue ^a   Gad, Eyal En ^b   Langberg, Michael ^b,c   Bruck, Jehoshua ^b  

^a TEXAS A AND M UNIVERSITY   (United States)

^b California Institute of Technology   (United States)

^c OPEN UNIVERSITY OF ISRAEL   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY SYMMETRIC CHANNEL; CODING SCHEME; GENERAL NOISE; IT SUPPORTS; MEMORY MODELING; MULTILEVEL CELL; NON-VOLATILE MEMORY; POLAR CODES;

FLASH MEMORY; INFORMATION THEORY;

ERROR CORRECTION;

EID: 84890398844     PISSN: 21578095     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISIT.2013.6620390     Document Type: Conference Paper

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