Anisotropic etching of atomically thin MoS2

Journal of Physical Chemistry C

Volumn 117, Issue 48, 2013, Pages 25643-25649

  Yamamoto, Mahito ^a,c   Einstein, Theodore L ^a   Fuhrer, Michael S ^a,b   Cullen, William G ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b MONASH UNIVERSITY   (Australia)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED IMPURITY; LATTICE PLANE; MOLYBDENUM DISULFIDE; NATIVE DEFECT; OXIDATION TIME; OXYGEN TREATMENT; P-TYPE DOPING; SUBSTRATE EFFECTS;

ANISOTROPIC ETCHING; DEFECT DENSITY; MOLYBDENUM OXIDE; SURFACE ROUGHNESS;

OXIDATION;

EID: 84890388468     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp410893e     Document Type: Article

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