The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities

Applied Physics Letters

Volumn 103, Issue 20, 2013, Pages

  Simmons Jr , Jay G ^a   Foreman, John V ^b   Liu, Jie ^a   Everitt, Henry O ^a,b  

^a DUKE UNIVERSITY   (United States)

^b US Army AMRDEC Development   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL EMISSION; DEEP-LEVEL DEFECTS; ENERGY INCREASE; EXCITATION CONDITIONS; EXCITATION DEPENDENCE; NONRADIATIVE PROCESS; PHOTOLUMINESCENCE EFFICIENCY; SIMPLE MODELING;

LIGHT EMISSION; PHOSPHORS; RATE CONSTANTS;

ZINC OXIDE;

EID: 84889689437     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4829745     Document Type: Article

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