Samarium-monosulfide-based semiconductor strain gages for spacecraft-strain transformation

Solar System Research

Volumn 47, Issue 7, 2013, Pages 601-604

  Volodin, N M ^a   Mishin, Yu N ^a   Kaminskii, V V ^b   Zakharov, Yu V ^c  

^a LAVOCHKIN ASSOCIATION   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c MIREA RUSSIAN TECHNOLOGICAL UNIVERSITY   (Russian Federation)

Author keywords

electrical resistance; mechanical quantity sensor; samarium monosulfide; strain; strain gage; strain sensitivity

Indexed keywords

EID: 84888419092     PISSN: 00380946     EISSN: None     Source Type: Journal    
DOI: 10.1134/S0038094613070150     Document Type: Article

References (5)

1. Kaminskii, V. V. and Golubkov, A. V., Piezoresistance of Semiconductor Samarium Sulfide, Fiz. Tverd. Tela, 1979, vol. 21, no. 9, pp. 2805-2807.
2. Klokova, N. P., Tenzorezistory: Teoriya, metodiki rascheta, razrabotki (Resistance Strain Gages: Theory, Calculation Procedure, Design), Moscow: Mashinostroenie, 1990, p. 224.
3. Poluprovodnikovye tenzodatchiki (Semiconductor Strain Sensors), Din, M., Ed., Moscow-Leningrad: Energiya, 1965, p. 216.
4. Tenzometriya v mashinostroenii. Spravochnoe posobie (Tensometry in Machinery Manufacturing. A Handbook), Makarov, R. A., Ed., Moscow: Mashinostroenie, 1975, p. 288.
5. Volodin, N. M., Kaminskii, V. V., and Mishin, Yu. N., Tensometry based on rare-earth semiconductors for the spacecrafts, Vestn. Nauch.-Proizv. Ob"ed. im. S. A. Lavochkina, 2011, no. 5, pp. 51-56.