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Volumn 88, Issue 19, 2013, Pages

Topological phase transition and two-dimensional topological insulators in Ge-based thin films

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EID: 84888315071     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.88.195147     Document Type: Article
Times cited : (23)

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    • Note that we have modeled nonstoichiometric compositions by using appropriate supercells of ordered phases. It will be interesting to consider disorder effects using first-principles approaches within the DFT framework (Ref.), although the virtual crystal approximation (Ref.) might provide a reasonable scheme for describing effects of Bi/Sb substitution.
    • Note that we have modeled nonstoichiometric compositions by using appropriate supercells of ordered phases. It will be interesting to consider disorder effects using first-principles approaches within the DFT framework (Ref.), although the virtual crystal approximation (Ref.) might provide a reasonable scheme for describing effects of Bi/Sb substitution.
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