Capabilities of gan schottky multipliers for LO power generation at millimeter-wave bands

Proceedings of the 19th International Symposium on Space Terahertz Technology, ISSTT 2008

Volumn , Issue , 2008, Pages 468-471

  Siles, José V ^a   Grajal, Jesús ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DRIFT VELOCITY; GALLIUM NITRIDES (GAN); HIGH BREAKDOWN FIELDS; MILLIMETER-WAVE BAND; MILLIMETRE WAVES; POWER-HANDLING CAPABILITY; SCHOTTKY DIODES; SCHOTTKY MULTIPLIERS;

GALLIUM ARSENIDE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

GALLIUM NITRIDE;

EID: 84888022363     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. F. Schwierz, "An electron mobility model for wurtzite GaN", Solid-State Electronics, vol. 48, no. 6, pp. 889-895, June 2005.
2. J. Grajal, J.V. Siles, V. Krozer, E. Sbarra and B. Leone, "Performance Evaluation of Multiplication Chains up to THz Frequencies", in Proc.29th Int. Conf. on Infrarred and Millimeter-waves & 12th Int. Conf. on THz Electronics, September, 2004.
3. J. Ward, E. Schlecht, G. Chattopadhyay, A. Maestrini, J. Gill, F. Maiwald, H. Javadi and I. Mehdi, "Capability of THz sources based on Schottky diode frequency multiplier chains", IEEE MTT-S International Microwave Symposium Digest, pp.1587-1590, June 2004.
4. J. Grajal, V. Krozer, E. González, F. Maldonado, and J. Gismero, "Modelling and design aspects of millimeter-wave and submillimetrewave Schottky diode varactor frequency multipliers," IEEE Transactions on Microwave Theory and Techniques, vol. 48, pp. 700-711, April 2000.
5. J.V. Siles, J. Grajal and V. Krozer, "Design of subharmonically pumped Schottky mixers for submillimetre-wave applications," 1st European Microwave Integrated Circuits Conference (EuMIC 2006), September 2006