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Volumn 1, Issue 47, 2013, Pages 7849-7855
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Tunable trap depth in Zn(Ga1-xAlx)2O 4:Cr,Bi red persistent phosphors: Considerations of high-temperature persistent luminescence and photostimulated persistent luminescence
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Author keywords
[No Author keywords available]
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Indexed keywords
HIGH TEMPERATURE;
IN-VIVO IMAGING;
PARTIAL SUBSTITUTION;
PERSISTENT LUMINESCENCE;
PHOTO STIMULATIONS;
THERMOLUMINESCENCE PEAKS;
TRAP DEPTH;
TRAPPED ELECTRONS;
GALLIUM;
INFRARED DEVICES;
LUMINESCENCE;
PHOSPHORS;
THERMAL ENERGY;
ALUMINUM;
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EID: 84887975538
PISSN: 20507534
EISSN: 20507526
Source Type: Journal
DOI: 10.1039/c3tc31462f Document Type: Article |
Times cited : (157)
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References (45)
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