Microstructure-induced Schottky barrier effects in barium strontium titanate (BST) thin films for 16 and 64 Mbit (DRAM cells)

ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics

Volumn , Issue , 1992, Pages 356-359

  Scott, J F ^a,b,c   Azuma, M ^b   Fujii, E ^d   Otsuki, T ^d   Kano, G ^d   Scott, M C ^a,b,c   Paz De Araujo, C A ^a,b,c   McMillan, L D ^a,b,c   Roberts, T ^a,b,c  

^a Symetris Corp ^*  (United States)

^b UNIVERSITY OF COLORADO   (United States)

^c Matsushita Electronics Corp ^*  (United States)

^d PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DYNAMIC RANDOM ACCESS STORAGE; FERROELECTRIC MATERIALS; GRAIN BOUNDARIES; SCHOTTKY BARRIER DIODES; STRONTIUM TITANATES; THIN FILMS; TITANIUM COMPOUNDS;

BARIUM STRONTIUM TITANATE THIN FILMS; BST THIN FILMS; CAPACITANCE VOLTAGE CHARACTERISTIC; CURRENT VOLTAGE; DEPLETION REGION; DYNAMIC RANDOM ACCESS MEMORY; FINE GRAINED; SCHOTTKY BARRIERS;

BARIUM STRONTIUM TITANATE;

EID: 84887826529     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISAF.1992.300707     Document Type: Conference Paper

References (10)

1. M. Azuma et al., "A 64 Mb Ferroelectric DRAM Cell, " IEDM Conf., Dec. 1992 (in press).
2. Y. Miyasaka et al., Proc. TMS Conf., Boulder, Colorado, June 1991 (in press).
3. R. Moazzami, C. Hu, \V. H. Shepherd, IEEE Electron Device Letters 11, 454 (1990);
4. L. H. Parker and A. F. Tasch, IEEE Circuit and Devices Mag. 17, (1990
5. R. Moazzami et al., IEEE Trans. Elec. Devices (in press, Aug. 1992).
6. J. F. Scott, C. A. Paz de Arau. jo, L. D. McMillan, H. Yoshimori, H. Watanahe, T. Mihara, M. Azuma, Toshiyuki Ueda, Tetsuko Ueda, D. Ueda, G. Kano, "Ferroelectric Thin Films in Integratred Microelectronic Devices, " Proc. 25th Int. Conf. Polar Dielectrics (London, April 1992, edited by Roger Whatmore et al. ), [Ferroelectrics, in Dress. 19921.
7. In-Chyuan Ho and Shen-Li Fu, "Effect of Reoxidation on the Grain-Boundary Acceptor State Density of Reduced BaTi03 Ceramics, " J Am. Ceram. Soc. 75, 728-30 (1992).
8. Ben Huybrechts, Kozo Ishizaki, Masasuke Takata, "Experimental Evaluation of the Acceptor-States Compensation in Positive-Temperature-Coefficient-Type Barium Titanate, " J. Am. Ceram. Soc. 75, 722-4 (1992).
9. S. Roberts, "Dielectric and Piezoelectric Properties of Barium Titanate, " Phys. Rev. 71, 890-5 (1947).
10. R. Waser and M. Klee, "Theory of Conduction and Breakdown in Perovskite Thin Films, " Proc. Int. Symp. Integrated Ferroelectrics (ISIF '91), Colorado Springs, CO, April 1991, edited by C. A. Paz de Araujo, pp. 288-305 [Ferroelectrics, in press, August 1992].