SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 47, 2013, Pages 15089-15094

Silicon protected with atomic layer deposited TiO2: Conducting versus tunnelling through TiO2

(7) Seger, Brian a Tilley, S David b Pedersen, Thomas c Vesborg, Peter C K a Hansen, Ole c Grätzel, Michael b Chorkendorff, Ib a

a Building 312 ^* (Denmark)

b EPFL (Switzerland)

c TECHNICAL UNIVERSITY OF DENMARK (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; DOPED MATERIALS; ELECTRON TRANSFER; ELECTRONIC CONDUCTION; OXIDATIVE PROCESS; REDOX POTENTIALS; SENSITIVE SPECIES; VACUUM-ANNEALING;

ANODIC OXIDATION; ATOMIC LAYER DEPOSITION; CATALYSTS; CONDUCTION BANDS; DOPING (ADDITIVES); ELECTRON TRANSITIONS; INTERFACES (MATERIALS); REDOX REACTIONS; SURFACES;

TITANIUM DIOXIDE;

EID: 84887738904 PISSN: 20507488 EISSN: 20507496 Source Type: Journal
DOI: 10.1039/c3ta12309j Document Type: Article

Times cited : (52)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.