Comparative study on nano-scale III-V double-gate MOSFETs with various channel materials

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 10, Issue 11, 2013, Pages 1413-1416

  Nishida, Akio ^a   Hasegawa, Kei ^a   Ohama, Ryoko ^a   Fujikawa, Sachie ^a   Hara, Shinsuke ^b   Fujishiro, Hiroki I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Backscattering; III V double gate MOSFET; Injection velocity; Quantum corrected Monte Carlo simulation; Rebound

Indexed keywords

COMPARATIVE STUDIES; CURRENT DRIVABILITY; DOUBLE GATE MOSFET; INJECTION VELOCITY; OPTICAL PHONON SCATTERING; POLAR OPTICAL PHONON SCATTERING; QUANTUM-CORRECTED MONTE CARLO SIMULATION; REBOUND;

BACKSCATTERING; DRAIN CURRENT; MOSFET DEVICES;

MONTE CARLO METHODS;

EID: 84887620598     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201300264     Document Type: Article

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