Evolution of the Fermi surface of a doped topological insulator with carrier concentration

Physical Review B - Condensed Matter and Materials Physics

Volumn 88, Issue 19, 2013, Pages

  Lahoud, E ^a   Maniv, E ^b   Petrushevsky, M Shaviv ^b   Naamneh, M ^a   Ribak, A ^a   Wiedmann, S ^c   Petaccia, L ^d   Salman, Z ^e   Chashka, K B ^a   Dagan, Y ^b   Kanigel, A ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^d SINCROTRONE TRIESTE   (Italy)

^e PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84887522850     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.88.195107     Document Type: Article

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