Process benchmarking of SiC backside via manufacturing for GaN HEMT technology

2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Volumn , Issue , 2009, Pages

  Stieglauer, H ^a   Bodege G ^a   Ottlin D ^a   Ilgen, M ^a   Blanck, H ^a   Behammer, D ^a  

^a United Monolithic Semiconductors GmbH   (Germany)

Author keywords

GaN HEMT; ICP etching; Laser ablation; SiC; Via hole

Indexed keywords

GAN HEMTS; IC MANUFACTURERS; ICP ETCHING; OPTIMIZED PARAMETER; PROCESS BENCHMARKING; SIC; SUBSTRATE MATERIAL; VIA HOLE;

BENCHMARKING; GALLIUM NITRIDE; LASER ABLATION; MANUFACTURE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; TECHNOLOGY TRANSFER;

SUBSTRATES;

EID: 84887485434     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)