SiC MESFET and MMIC technology transition to production

2005 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2005, Pages

  Milligan, J W ^a   Henning, J ^a   Allen, S T ^a   Ward, A ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

EW; HPSI; MESFET; MMIC; SiC

Indexed keywords

4H-SIC SUBSTRATE; HPSI; MESFET; MMIC POWER AMPLIFIER; MMIC TECHNOLOGY; SECOND GENERATION; SEMI-INSULATING; SIC;

ELECTRONIC WARFARE; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTOR DEVICE MANUFACTURE;

SILICON CARBIDE;

EID: 84887328226     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. J.W. Milligan, et al, "Transition of SiC MESFET Technology from Discrete Transistors to High Performance MMIC Technology", GaAs MANTECH Conference Digest of Papers, Miami, FL (2004).