Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

Semiconductors

Volumn 47, Issue 11, 2013, Pages 1513-1516

  Vinnichenko, M Ya ^a   Vorobjev, L E ^a   Firsov, D A ^a   Mashko, M O ^a   Balagula, R M ^a   Belenky, G ^b   Shterengas, L ^b   Kipshidze, G ^b  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84887285271     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782613110237     Document Type: Article

References (5)

1. L. E. Vorobjev, V. L. Zerova, K. S. Borshchev, Z. N. Sokolova, I. S. Tarasov, and G. Belenky, Semiconductors 42, 737 (2008).
2. L. E. Vorobjev, S. N. Danilov, V. L. Zerova, and D. A. Firsov, Semiconductors 37, 586 (2003).
3. W. M. Webster, Proc. IRE 42, 914 (1954).
4. G. N. Iluridze, A. N. Titkov, and E. M. Chaikina, Sov. Phys. Semicond. 21, 48 (1987).
5. G. Belenky, L. Shterengas, D. Wang, G. Kipshidze, and L. Vorobjev, Semicond. Sci. Technol. 24, 115013 (2009).