Proximity gettering of slow diffuser contaminants in CMOS image sensors

Solid-State Electronics

Volumn 91, Issue , 2014, Pages 91-99

  Russo, F ^a,c   Moccia, G ^a,c   Nardone, G ^a,c   Alfonsetti, R ^a,c   Polsinelli, G ^a,c   D'Angelo, A ^a,c   Patacchiola, A ^a,c   Liverani, M ^a,c   Pianezza, P ^a,c   Lippa, T ^a,c   Carlini, M ^a,c   Polignano, M L ^b,d   Mica, I ^b,d   Cazzini, E ^b,d   Ceresoli, M ^b,d   Codegoni, D ^b,d  

^a MICRON TECHNOLOGY INC   (United States)

^b Micron Semiconductor Italia ^*  (Italy)

^c LFoundry Srl   (Italy)

^d UNIVERSITY OF MILAN   (Italy)

Author keywords

Contamination; Dark current; DLTS; Gettering; Image sensors

Indexed keywords

CARBON-IMPLANTATION; CMOS IMAGE SENSOR; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; EXTENDED DEFECT; GETTERING; GETTERING EFFICIENCY; IMPURITY CONCENTRATION; METALLIC CONTAMINATION;

CONTAMINATION; DARK CURRENTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; IMAGE SENSORS; NANOCRYSTALLINE SILICON;

IMPURITIES;

EID: 84887238509     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.10.011     Document Type: Article

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