Interstitial-boron solution strengthened WB3+x

Applied Physics Letters

Volumn 103, Issue 17, 2013, Pages

  Cheng, Xiyue ^a   Zhang, Wei ^a,b   Chen, Xing Qiu ^a   Niu, Haiyang ^a   Liu, Peitao ^a   Du, Kui ^a,b   Liu, Gang ^a   Li, Dianzhong ^a   Cheng, Hui Ming ^a   Ye, Hengqiang ^a   Li, Yiyi ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATION-CORRECTED; BORON ATOM; BORON-LAYERS; COVALENT NETWORK; INTERSTITIAL BORON; NON-STOICHIOMETRIC; TUNGSTEN LAYERS;

HARDNESS; TRANSMISSION ELECTRON MICROSCOPY;

BORON;

EID: 84887116703     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4826485     Document Type: Article

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