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Applied Surface Science

Volumn 285, Issue PARTB, 2013, Pages 755-758

Low resistivity of N-doped Cu 2 O thin films deposited by rf-magnetron sputtering

(5) Lai, Guozhong a Wu, Yangwei b Lin, Limei b Qu, Yan b Lai, Fachun b

a LONGYAN UNIVERSITY (China)

b FUJIAN NORMAL UNIVERSITY (China)

Author keywords

N doped; Sputtering

Indexed keywords

COPPER OXIDES; MAGNETRON SPUTTERING; NITROGEN; PARTIAL PRESSURE; SEMICONDUCTOR DOPING; SPUTTERING; THIN FILMS;

CU2O FILMS; DEPOSITED RATE; LOW RESISTIVITY; N-DOPED; NITROGEN PARTIAL PRESSURES; QUARTZ SUBSTRATE; REACTIVE MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING;

NITROGEN COMPOUNDS;

EID: 84887083385 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2013.08.122 Document Type: Article

Times cited : (27)

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