Prediction of a large number of electron pockets near the band edges in type-VIII clathrate Si46 and its physical properties from first principles

Journal of Physics Condensed Matter

Volumn 25, Issue 47, 2013, Pages

  Norouzzadeh, Payam ^a   Myles, Charles W ^b   Vashaee, Daryoosh ^a  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC BAND STRUCTURE; HYPOTHETICAL MATERIALS; INDIRECT SEMICONDUCTOR; NEAR ROOM TEMPERATURE; SEMICONDUCTING MATERIALS; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC APPLICATION; THERMOELECTRIC POWER FACTORS;

BAND STRUCTURE; FORECASTING; HYDRATES; PRASEODYMIUM COMPOUNDS; SILICON; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER; THERMOELECTRICITY;

SEMICONDUCTING SILICON;

EID: 84887048250     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/25/47/475502     Document Type: Article

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