-
1
-
-
78650859591
-
Stress-driven 3D-IC placement with TSV keep-out zone and regularity study
-
Nov.
-
K. Athikulwongse, A. Chakraborty, J.-S. Yang, D. Z. Pan, and S. K. Lim, "Stress-driven 3D-IC placement with TSV keep-out zone and regularity study," in Proc. IEEE Int. Conf. Computer-Aided Des., Nov. 2010, pp. 669-674.
-
(2010)
Proc. IEEE Int. Conf. Computer-Aided Des.
, pp. 669-674
-
-
Athikulwongse, K.1
Chakraborty, A.2
Yang, J.-S.3
Pan, D.Z.4
Lim, S.K.5
-
2
-
-
79959299472
-
Thermomechanical reliability of through-silicon vias in 3D interconnects
-
Apr.
-
K. H. Lu, S.-K. Ryu, J. Im, R. Huang, and P. S. Ho, " Thermomechanical reliability of through-silicon vias in 3D interconnects," in Proc. IEEE Int. Rel. Phys. Symp., Apr. 2011, pp. 3D.1.1-3D.1.7.
-
(2011)
Proc. IEEE Int. Rel. Phys. Symp.
-
-
Lu, K.H.1
Ryu, S.-K.2
Im, J.3
Huang, R.4
Ho, P.S.5
-
3
-
-
70349670743
-
Development of 3-D silicon die stacked package using flip chip technology with micro bump interconnects
-
May
-
S. R. Vempati, S. R. Vempati, N. Su, C. H. Khong, Y. Y. Lim, K. Vaidyanathan, J. H. Lau, B. P. Liew, K. Y. Au, S. Tanary, A. Fenner, R. Erich, and J. Milla, "Development of 3-D silicon die stacked package using flip chip technology with micro bump interconnects," in Proc. IEEE Electron. Components Technol. Conf., May, 2009, pp. 980-987.
-
(2009)
Proc. IEEE Electron. Components Technol. Conf.
, pp. 980-987
-
-
Vempati, S.R.1
Vempati, S.R.2
Su, N.3
Khong, C.H.4
Lim, Y.Y.5
Vaidyanathan, K.6
Lau, J.H.7
Liew, B.P.8
Au, K.Y.9
Tanary, S.10
Fenner, A.11
Erich, R.12
Milla, J.13
-
4
-
-
78649886664
-
Simulation methodology and flow integration for 3D IC stress management
-
Sep.
-
M. Nakamoto, R. Radojcic, W. Zhao, V. K. Dasarapu, A. P. Karmarkar, and X. Xu, "Simulation methodology and flow integration for 3D IC stress management," in Proc. IEEE Custom Integr. Circuits Conf., Sep. 2010, pp. 1-4.
-
(2010)
Proc. IEEE Custom Integr. Circuits Conf.
, pp. 1-4
-
-
Nakamoto, M.1
Radojcic, R.2
Zhao, W.3
Dasarapu, V.K.4
Karmarkar, A.P.5
Xu, X.6
-
5
-
-
80052655341
-
TSV stress-aware fullchip mechanical reliability analysis and optimization for 3D IC
-
Jun.
-
M. Jung, J. Mitra, D. Z. Pan, and S. K. Lim, "TSV stress-aware fullchip mechanical reliability analysis and optimization for 3D IC," in Proc. ACM Des. Autom. Conf., Jun. 2011, pp. 188-193.
-
(2011)
Proc. ACM Des. Autom. Conf.
, pp. 188-193
-
-
Jung, M.1
Mitra, J.2
Pan, D.Z.3
Lim, S.K.4
-
6
-
-
84862928895
-
Full-chip through-silicon-via interfacial crack analysis and optimization for 3D IC
-
Nov.
-
M. Jung, X. Liu, S. Sitaraman, D. Z. Pan, and S. K. Lim, "Full-chip through-silicon-via interfacial crack analysis and optimization for 3D IC," in Proc. IEEE Int. Conf. Computer-Aided Des., Nov. 2011, pp. 563-570.
-
(2011)
Proc. IEEE Int. Conf. Computer-Aided Des.
, pp. 563-570
-
-
Jung, M.1
Liu, X.2
Sitaraman, S.3
Pan, D.Z.4
Lim, S.K.5
-
7
-
-
77956216567
-
TSV stress aware timing analysis with applications to 3D-IC layout optimization
-
Jun.
-
J.-S. Yang, K. Athikulwongse, Y.-J. Lee, S. K. Lim, and D. Z. Pan, "TSV stress aware timing analysis with applications to 3D-IC layout optimization," in Proc. ACM Des. Autom. Conf., Jun. 2010, pp. 803- 806.
-
(2010)
Proc. ACM Des. Autom. Conf.
, pp. 803-806
-
-
Yang, J.-S.1
Athikulwongse, K.2
Lee, Y.-J.3
Lim, S.K.4
Pan, D.Z.5
-
8
-
-
33751547867
-
Modeling thermal stresses in 3-D IC interwafer interconnects
-
DOI 10.1109/TSM.2006.883587
-
J. Zhang, M. O. Bloomfield, J.-Q. Lu, R. J. Gutmann, and T. S. Cale, "Modeling thermal stresses in 3-D IC interwafer interconnects," IEEE Trans. Semicond. Manuf., vol. 19, no. 4, pp. 437-448, Nov. 2006. (Pubitemid 44832947)
-
(2006)
IEEE Transactions on Semiconductor Manufacturing
, vol.19
, Issue.4
, pp. 437-448
-
-
Zhang, J.1
Bloomfield, M.O.2
Lu, J.-Q.3
Gutmann, R.J.4
Cale, T.S.5
-
9
-
-
79952820386
-
Impact of near-surface thermal stresses on interfacial reliability of through-silicon-vias for 3-D interconnects
-
Mar
-
S.-K. Ryu, K.-H. Lu, X. Zhang, J.-H. Im, P. S. Ho, and R. Huang, "Impact of near-surface thermal stresses on interfacial reliability of through-silicon-vias for 3-D interconnects," IEEE Trans. Device Mater. Rel., vol. 11, no. 1, pp. 35-43, Mar. 2011.
-
(2011)
IEEE Trans. Device Mater. Rel.
, vol.11
, Issue.1
, pp. 35-43
-
-
Ryu, S.-K.1
Lu, K.-H.2
Zhang, X.3
Im, J.-H.4
Ho, P.S.5
Huang, R.6
-
10
-
-
70349670752
-
Thermomechanical reliability of 3-D ICs containing through silicon vias
-
May
-
K. H. Lu, X. Zhang, S.-K. Ryu, J. Im, R. Huang, and P. S. Ho, "Thermomechanical reliability of 3-D ICs containing through silicon vias," in Proc. IEEE Electron. Components Technol. Conf., May 2009, pp. 630- 634.
-
(2009)
Proc. IEEE Electron. Components Technol. Conf.
, pp. 630-634
-
-
Lu, K.H.1
Zhang, X.2
Ryu, S.-K.3
Im, J.4
Huang, R.5
Ho, P.S.6
-
11
-
-
0033907557
-
CMOS stress sensors on (100) silicon
-
DOI 10.1109/4.818923
-
R. C. Jaeger, J. C. Suhling, R. Ramani, A. T. Bradley, and J. Xu, "CMOS stress sensors on (100) silicon," IEEE J. Solid-State Circuits, vol. 35, no. 1, pp. 85-95, Jan. 2000. (Pubitemid 30553002)
-
(2000)
IEEE Journal of Solid-State Circuits
, vol.35
, Issue.1
, pp. 85-95
-
-
Jaeger, R.C.1
Suhling, J.C.2
Ramani, R.3
Bradley, A.T.4
Xu, J.5
-
12
-
-
33745646107
-
Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility
-
DOI 10.1109/LED.2006.877714
-
W. Xiong, C. R. Cleavelin, P. Kohli, C. Huffman, T. Schulz, K. Schruefer, G. Gebara, K. Mathews, P. Patruno, Y.-M. L. Vaillant, I. Cayrefourcq, M. Kennard, C. Mazure, K. Shin, and T.-J. K. Liu, "Impact strained-silicon-on- insulator (SSOI) substrate on finFET mobility," IEEE Electron Device Lett., vol. 27, no. 7, pp. 612-614, Jul. 2006. (Pubitemid 43965304)
-
(2006)
IEEE Electron Device Letters
, vol.27
, Issue.7
, pp. 612-614
-
-
Xiong, W.1
Cleavelin, C.R.2
Kohli, P.3
Huffman, C.4
Schulz, T.5
Schruefer, K.6
Gebara, G.7
Mathews, K.8
Patruno, P.9
Le Vaillant, Y.-M.10
Cayrefourcq, I.11
Kennard, M.12
Mazure, C.13
Shin, K.14
Liu, T.-J.K.15
-
13
-
-
79955711352
-
A 1.2, v 12.8 GB/s 2Gb mobile wide-I/O DRAM with 4×128 I/O using TSV-based stacking
-
Feb.
-
J.-S. Kim, C. S. Oh, H. Lee, D. Lee, H.-R. Hwang, S. Hwang, B. Na, J. Moon, J.-G. Kim, H. Park, J.-W. Ryu, K. Park, S.-K. Kang, S.-Y. Kim, H. Kim, J.-M. Bang, H. Cho, M. Jang, C. Han, J.-B. Lee, K. Kyung, J.-S. Choi, and Y.-H. Jun, "A 1.2 V 12.8 GB/s 2Gb mobile wide-I/O DRAM with 4×128 I/O using TSV-based stacking," in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2011, pp. 496-498.
-
(2011)
Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers
, pp. 496-498
-
-
Kim, J.-S.1
Oh, C.S.2
Lee, H.3
Lee, D.4
Hwang, H.-R.5
Hwang, S.6
Na, B.7
Moon, J.8
Kim, J.-G.9
Park, H.10
Ryu, J.-W.11
Park, K.12
Kang, S.-K.13
Kim, S.-Y.14
Kim, H.15
Bang, J.-M.16
Cho, H.17
Jang, M.18
Han, C.19
Lee, J.-B.20
Kyung, K.21
Choi, J.-S.22
Jun, Y.-H.23
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