Effects of excitation frequency on high-order terahertz sideband generation in semiconductors

New Journal of Physics

Volumn 15, Issue , 2013, Pages

  Xie, Xiao Tao ^a,b   Zhu, Bang Fen ^c   Liu, Ren Bao ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b NORTHWEST UNIVERSITY   (China)

^c TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-HOLE GENERATION; EXCITATION CONDITIONS; EXCITATION FREQUENCY; HIGH ORDER HARMONIC GENERATION; NUMERICAL CALCULATION; PROBABILITY AMPLITUDE; RECOMBINATION PROCESS; TERAHERTZ SIDEBAND GENERATION;

ATOM LASERS; ATOMS; BINDING ENERGY; CUTOFF FREQUENCY; ELECTRON TUNNELING; ELECTRONS; ENERGY GAP; HARMONIC GENERATION; QUANTUM CHEMISTRY; SEMICONDUCTOR LASERS;

LASER EXCITATION;

EID: 84886501756     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/15/10/105015     Document Type: Article

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